ΠΡΟΓΡΑΜΜΑΤΙΖΟΜΕΝΗ ΜΝΗΜΗ EEPROM AT29C010

CMOS Flash Memory


Fast Read Access Time - 70 ns · 5-Volt-Only Reprogramming · Sector Program Operation
Single Cycle Reprogram (Erase and Program)
1024 Sectors (128 bytes/sector)
Internal Address and Data Latches for 128-Bytes · Two 8 KB Boot Blocks with Lockout · Internal Program Control and Timer · Hardware and Software Data Protection · Fast Sector Program Cycle Time - 10 ms · DATA Polling for End of Program Detection · Low Power Dissipation
50 mA Active Current
100 mA CMOS Standby Current · Typical Endurance > 10,000 Cycles · Single 5V ±10% Supply · CMOS and TTL Compatible Inputs and Outputs · Commercial and Industrial Temperature Ranges